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SVG042R5NL5 - 40V N-CHANNEL MOSFET

Download the SVG042R5NL5 datasheet PDF. This datasheet also covers the SVG042R5NL5-SilanMicroelectronics variant, as both devices belong to the same 40v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG042R5NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 108A, 40V, RDS(on)(typ. )=2.2m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG042R5NL5-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG042R5NL5
Manufacturer Silan Microelectronics
File Size 426.84 KB
Description 40V N-CHANNEL MOSFET
Datasheet download datasheet SVG042R5NL5 Datasheet

Other Datasheets by Silan Microelectronics

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SVG041R2NL5 40V N-CHANNEL MOSFET
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SVG032R4NL3 30V N-CHANNEL MOSFET
SVG036R8NL5 30V N-CHANNEL MOSFET
SVG062R0NT 60V N-CHANNEL MOSFET
SVG062R8NL5 60V N-CHANNEL MOSFET
SVG063R5NL5 60V N-CHANNEL MOSFET
SVG069R5ND 60V N-CHANNEL MOSFET
SVG069R5NMJ 60V N-CHANNEL MOSFET
SVG069R5NT 60V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG042R5NL5_Datasheet 108A, 40V N-CHANNEL MOSFET DESCRIPTION SVG042R5NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  108A, 40V, RDS(on)(typ.)=2.2m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 40 1.4~2.4 2.