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SVD9N65F - 650V N-CHANNEL MOSFET

This page provides the datasheet information for the SVD9N65F, a member of the SVD9N65T 650V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology.

Features

  • ∗ 9A,650V,RDS(on)(typ. )=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet preview – SVD9N65F

Datasheet Details

Part number SVD9N65F
Manufacturer Silan Microelectronics
File Size 668.11 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVD9N65F Datasheet
Additional preview pages of the SVD9N65F datasheet.

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Full PDF Text Transcription

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD9N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 9A,650V,RDS(on)(typ.)=0.98Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE SVD9N65T/F ORDERING SPECIFICATIONS Part No.
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