Datasheet4U Logo Datasheet4U.com

SVD9Z24NT - P-CHANNEL MOSFET

Datasheet Summary

Description

SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process.

Features

  • -12A, -55V ,RDS(on)(typ. ).

📥 Download Datasheet

Datasheet preview – SVD9Z24NT

Datasheet Details

Part number SVD9Z24NT
Manufacturer Silan Microelectronics
File Size 242.92 KB
Description P-CHANNEL MOSFET
Datasheet download datasheet SVD9Z24NT Datasheet
Additional preview pages of the SVD9Z24NT datasheet.

📁 Similar Datasheet

  • SVD101 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD102 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD201 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD202 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD301 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD302 - X Band VCO / PLO (Sanyo Semicon Device)
  • SVD4N60D - 600V N-Channel MOSFET (Silan)
  • SVD4N60DTR - 600V N-Channel MOSFET (Silan)
  • SVD4N60F - 600V N-Channel MOSFET (Silan)
  • SVD4N60FG - 600V N-Channel MOSFET (Silan)
Other Datasheets by Silan Microelectronics

Full PDF Text Transcription

Click to expand full text
Silan Microelectronics SVD9Z24NT_Datasheet -12A, -55V P-CHANNEL MOSFET GENERAL DESCRIPTION SVD9Z24NT is a P-channel enhancement mode power MOS field effect transistor which is produced using Silan planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in push-pull amplifier, high-side switching circuit, CMOS power amplifier. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  -12A, -55V ,RDS(on)(typ.)<175m@VGS=-10V  P channel  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 1 23 TO-220-3L ORDERING INFORMATION Part No.
Published: |