Datasheet Details
| Part number | STS65R580DS2 |
|---|---|
| Manufacturer | Silan Microelectronics |
| File Size | 440.32 KB |
| Description | 650V SUPER JUNCTION MOS POWER TRANSISTOR |
| Datasheet |
 STS65R580DS2 Datasheet
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General Description
STS65R580D(F)(S)(MJ)S2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
Key Features
- 8A, 650V, RDS(on)(typ. )=0.52@VGS=10V.
- New revolutionary high voltage technology.
- Ultra low gate charge.
- Periodic avalanche rated.
- Extreme dv/dt rated.
- High peak current capability.
- 100% avalanche tested.
- Pb-free lead plating.
- RoHS compliant 2 1 3 1 3 TO-263-2L 1.Gate 2.Drain 3.Source 12 3 TO-251J-3L 1 3 TO-252-2L 12 3 TO-220F-3L KEY.