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SGTQ75V65FDB1P7 - 650V FIELD STOP IGBT

Download the SGTQ75V65FDB1P7 datasheet PDF. This datasheet also covers the SGTQ75V65FDB1P7-SilanMicroelectronics variant, as both devices belong to the same 650v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

The SGTQ75V65FDB1P7 field stop IGBT adopts Silan Field Stop 5 technology.

Key Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS, and PFC fields.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGTQ75V65FDB1P7-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGTQ75V65FDB1P7
Manufacturer Silan Microelectronics
File Size 413.86 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ75V65FDB1P7 Datasheet

Other Datasheets by Silan Microelectronics

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SGTQ40T120SDB2P7 1200V FIELD STOP IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SGTQ75V65FDB1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ75V65FDB1P7 field stop IGBT adopts Silan Field Stop 5 technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Ultra-fast switching  High input impedance  Tjmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series Automotive Current, 75: 75A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT Q 75 V 65 F D B 1 P7 Package P7: TO-247-3L 1,2,3… : Version No.