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SGTQ50T65SDM1P7 - 650V FIELD STOP IGBT

General Description

The SGTQ50T65SDM1P7 field stop IGBT adopts Silan Field Stop III technology.

Key Features

  • low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields.

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Datasheet Details

Part number SGTQ50T65SDM1P7
Manufacturer Silan Microelectronics
File Size 537.79 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTQ50T65SDM1P7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGTQ50T65SDM1P7_Datasheet 50A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ50T65SDM1P7 field stop IGBT adopts Silan Field Stop III technology. It features low conduction loss and switching loss, is applicable to photovoltaic, UPS, SMPS and PFC fields. FEATURES  AEC-Q101 qualified  50A, 650V, VCE(sat)(typ.)=1.65V@IC=50A  Low conduction loss  Fast switching  High input impedance  TJmax=175C C 2 1 G 3 E 12 3 TO-247-3L NOMENCLATURE IGBT series Automotive Current, 50: 50A N : N-channel NE : N-channel planner gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 6 Voltage, 65: 650V 120: 1200V SGT Q 50 T 65 S D M 1 P7 Package P7: TO-247-3L 1,2,3 : Version No.