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3VD186700YL - HIGH VOLTAGE MOSFET CHIPS

General Description

¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.

¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

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Datasheet Details

Part number 3VD186700YL
Manufacturer Silan Microelectronics
File Size 102.79 KB
Description HIGH VOLTAGE MOSFET CHIPS
Datasheet download datasheet 3VD186700YL Datasheet

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3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. ¾ ¾ Die size: 1.96mm*1.78mm. Chip Thickness: 300±20μm. Top metal: Al, Backside Metal: Ag.