3VD182600YL - HIGH VOLTAGE MOSFET CHIPS

Silan Microelectronics

General Description

Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.

Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability.

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3VD182600YL high voltage mosfet chips by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	3VD182600YL
Manufacturer	Silan Microelectronics
File Size	45.88 KB
Description	HIGH VOLTAGE MOSFET CHIPS
Datasheet	3VD182600YL Datasheet

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3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø Ø Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-92DT-3L type and the typical equivalent product is 1N60C. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Ø Ø Die size: 1.90mm*1.75mm. Chip Thickness: 300±20µm. Top metal : Al, Backside Metal : Ag.