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HYM362140GS-60 - 2M x 36-Bit Dynamic RAM Module

Description

DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) Semiconductor Group 601 05.94 HYM 362140S/GS-60/-70 2M x 36-Bit The HYM 362140S/GS-60/-70 is a 8 M Byte DRAM module organized as 2 097 152 words by 36-bit in a 72-pin

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM362140GS-70 2M x 36-Bit Dynamic RAM Module
HYM362140S 2M x 36-Bit Dynamic RAM Module
HYM361120 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120GS-60 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120GS-70 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)

Full PDF Text Transcription

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2M x 36-Bit Dynamic RAM Module HYM 362140S/GS-60/-70 Advanced Information • 2 097 152 words by 36-bit organization (alternative 4 194 304 words by 18-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6952 mW active (-60 version) max. 6292 mW active (-70 version) CMOS – 132 mW standby TTL – 264 mW standby • • CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 12 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin Single in-Line Memory Module with 31.
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