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HYM361120 - 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)

Description

DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) Semiconductor Group 591 06.94 HYM 36112

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM361120GS-60 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120GS-70 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120S-60 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361120S-70 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)
HYM361140GS-60 1M x 36-Bit Dynamic RAM Module (2M x 18-Bit Dynamic RAM Module)

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1M × 36-Bit Dynamic RAM Module (2M × 18-Bit Dynamic RAM Module) HYM 361120/40S/GS-60/-70 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 6820 mW active (-60 version) max.
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