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HYM321160S - 1M x 32-Bit Dynamic RAM Module

Description

DRAM module (access time 60 ns) DRAM module (access time 70 ns) DRAM module (access time 60 ns) DRAM module (access time 70 ns) Semiconductor Group 541 09.94 HYM 321160S/GS-60/-70 1M x 32-Bit The HYM 321160S/GS-60/-70 is a 4 M Byte DRAM module organized as 1 048 576 words by 32-bit in a 72-pin

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1M x 32-Bit Dynamic RAM Module (2M x 16-Bit Dynamic RAM Module) HYM 321160S/GS-60/-70 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 4840 mW active (-60 version) max.
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