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HYM321000GS-60 - 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module

Description

VSS DQ16 DQ17 DQ18 DQ19 N.C.

A1 A3 A5 N.C.

DQ20 DQ21 DQ22 DQ23 N.C.

Features

  • nsures that tRAC (max. ) can be met. tRCD (max. ) is specified as a reference point only: If tRCD is greater than the specifie.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM321000GS-50 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
HYM321000S 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module
HYM321005GS-50 1M x 32-Bit Dynamic RAM Module
HYM321005GS-60 1M x 32-Bit Dynamic RAM Module
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Full PDF Text Transcription

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1M × 32-Bit Dynamic RAM Module (2M × 16-Bit Dynamic RAM Module) HYM 321000S/GS-50/-60 Advanced Information • 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit) Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max 2200 mW active (-50 version) max.
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