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HYB5117400BT-70 - 4M x 4-Bit Dynamic RAM

Description

N.C.

Vcc I/O1 I/O2 WE RAS N.C.

Features

  • include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5117400BJ-50 HYB 5117400BJ-60 HYB 5117400BJ-70 HYB 5117400BT-50 HYB 5117400BT-60 HYB 5117400BT-70 Pin Names A0 to A10 A0 to A10 RAS OE I/O1-I/O4 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply (+ 5 V) Ground (0 V) not connected Ordering C.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB5117400BT-50 4M x 4-Bit Dynamic RAM
HYB5117400BT-60 4M x 4-Bit Dynamic RAM
HYB5117400BJ-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117400BJ-60 4M x 4-Bit Dynamic RAM
HYB5117400BJ-70 4M x 4-Bit Dynamic RAM

Full PDF Text Transcription

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4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns • • Single + 5 V (± 10 %) supply Low power dissipation max. 660 active mW (-50 version) max. 605 active mW (-60 version) max. 550 active mW (-70 version) 11 mW standby (TTL) 5.5.
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