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HYB5117400BJ-60 - 4M x 4-Bit Dynamic RAM

Description

Semiconductor Group 2 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Pin Names HYB 5(3)116400 4k-Refresh Row Address Inputs Column Address Inputs Row Address Strobe Column Address Strobe Output Enable Data Input/Output Read/Write Input Power Supply Ground (0 V) Not Co

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB5117400BJ-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117400BJ-70 4M x 4-Bit Dynamic RAM
HYB5117400BT-50 4M x 4-Bit Dynamic RAM
HYB5117400BT-60 4M x 4-Bit Dynamic RAM
HYB5117400BT-70 4M x 4-Bit Dynamic RAM

Full PDF Text Transcription

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4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: -50 -60 60 15 30 40 ns ns ns ns HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 tRAC RAS access time tCAC CAS access time tAA tRC tPC Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 84 35 104 ns • Power Dissipation, Refresh & Addressing: HYB 5116400 -50 Power Supply Addressing Refresh Active TTL Standby CMOS Standby 275 11 5.5 -60 5 V ± 10% 12/10 220 HYB 3116400 -50 -60 3.3 V ± 0.3 V 12/10 180 7.2 3.6 144 HYB 5117400 -50 -60 5 V ± 10% 11/11 440 11 5.5 385 HYB 3117400 -50 -60 3.3 V ± 0.3 V 11/11 288 7.2 3.
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