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Q62702-A779 - Silicon Switching Diodes (Switching applications High breakdown voltage)

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Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA GB GC GD Ordering Code (tape and reel) Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration Package1) SOT-89 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 125 ˚C Junction temperature Symbol VR VRM IF IFM IFS Ptot Tj Values Unit BAW 78 A BAW 78 B BAW 78 C BAW 78 D 50 50 100 100 1 1 10 1 150 – 65 … + 150 W ˚C 200 200 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ 95 25 K/W 1) 2) For detailed information see chapter Package Outlin
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