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Q62702-A771 - Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)

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Silicon Switching Diodes BAW 79 A … BAW 79 D For high-speed switching q High breakdown voltage q Common cathode q Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D Marking GE GF GG GH Ordering Code (tape and reel) Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 Pin Configuration Package1) SOT-89 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 115 ˚C Junction temperature Symbol BAW VR VRM IF IFM IFS Ptot Tj 50 50 Values BAW BAW 100 100 1 1 10 1 150 – 65 … + 150 W ˚C 200 200 Unit BAW 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ 175 35 K/W 1) 2) For detailed information see chapter Pack
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