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BUZ60
Semiconductor
Data Sheet
October 1998
File Number 2260.1
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
Features
• 5.5A, 400V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (5.5A, This type can be operated directly from integrated circuits. • High Input Impedance 400V, Formerly developmental type TA17414. • Majority Carrier Device 1.
BUZ60B Datasheet
