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BUZ60B
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE BUZ60B
Voss 400 V
Ros(on)
1.5 n
10 4.5 A
• HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS
• ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND
SIZE
INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH
N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps.
BUZ60B Datasheet
