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BUZ382 - Power Transistor

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BUZ 382 SIPMOS ® Power Transistor • N channel • Enhancement mode • FREDFET Pin 1 G Pin 2 D Pin 3 S Type BUZ 382 VDS 400 V ID 12.5 A RDS(on) 0.4 Ω Package TO-218 AA Ordering Code C67078-A3207-A2 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 400 400 Unit V VDS VDGR ID RGS = 20 kΩ Continuous drain current A 12.5 TC = 30 °C Pulsed drain current IDpuls 50 TC = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ...
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