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BTS941 Datasheet Smart Lowside Power Switch

Manufacturer: Siemens Semiconductor Group (now Infineon)

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General Description

N channel vertical power FET in Smart SIPMOS ® chip on chip technology.

Fully protected by embedded protected functions.

V bb + LOAD NC Drain dv/dt limitation Current limitation Overvoltage protection M 2 3 1 IN 4 CC Overtemperature protection ESD R CC Overload protection Short circuit circuit Short protection protection Source 5 HITFET ® Semiconductor Group Page 1 14.07.1998 BTS 941 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection RCC = 0 Ω without RCC Continuous input current -0.2V ≤ VIN ≤ 10V 1) Symbol Value 60 15 50 Unit V VDS VDS(SC) IIN no limit | IIN | ≤ 2 - 40 ...

Overview

HITFET® BTS 941 Smart Lowside Power Switch.

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • Thermal Shutdown.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 28 6 12 V mΩ A A 4000 mJ limitation.
  • Maximum current adjustable with external resistor.
  • Current sense.
  • Status feedback.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Technologies AG Logo BTS941 Smart Lowside Power Switch Infineon Technologies AG

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