The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
BSM 100 GD 120 DN2
IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 100 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package ECONOPACK 3
Ordering Code C67070-A2517-A67
1200V 150A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 150 100
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
300 200
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
680
W + 150 -55 ... + 150 ≤ 0.182 ≤ 0.
BSM100GD120DN2 Datasheet
