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BSM100GB170DN2 - IGBT

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BSM 100 GB 170 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • RG on,min = 15 Ohm Type BSM 100 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67070-A2703-A67 1700V 145A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 145 100 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 290 200 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1000 W + 150 -55 ... + 150 ≤ 0.13 ≤ 0.
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