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BAR63-W - Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

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Part Number Description Manufacturer
BAR63-02L Silicon PIN Diodes Infineon Technologies AG
BAR63-02V Silicon PIN Diodes Infineon Technologies AG
BAR63-02W Silicon PIN Diodes Infineon Technologies AG
BAR63-03W Silicon PIN Diodes Infineon Technologies AG
BAR63-04 Silicon PIN Diodes Infineon Technologies AG

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BAR63-02W Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
BAR63-03 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-03W Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)

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BAR 63 ... W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz 3 2 1 VSO05561 BAR 63-04W BAR 63-05W BAR 63-06W Type BAR 63-04W BAR 63-05W BAR 63-06W Marking Ordering Code G4s G5s G6s Q62702-A1261 Q62702-A1267 Q62702-A1268 Pin Configuration 1 = A1 1 = A1 1 = C1 2 = C2 2 = A2 2 = C2 3 = C1/2 3 = A1/2 Package 3=C1/A2 SOT-323 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S ≤ 105 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 50 100 250 150 - 55 ...+150 - 55 ...
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