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BAR63-03W - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

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Part Number Description Manufacturer
BAR63-03W Silicon PIN Diodes Infineon Technologies AG
BAR63-02L Silicon PIN Diodes Infineon Technologies AG
BAR63-02V Silicon PIN Diodes Infineon Technologies AG
BAR63-02W Silicon PIN Diodes Infineon Technologies AG
BAR63-04 Silicon PIN Diodes Infineon Technologies AG

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BAR63-03 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-02W Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance)
BAR63-04 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-04W Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz)
BAR63-05 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

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BAR 63-03W Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type BAR 63-03W Marking G Ordering Code (tape and reel) Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323 1) Maximum Ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 111°C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient 1) Symbol BAR 63-03W 50 100 250 -55 +150°C -55...+150°C Unit V mA mW °C °C VR IF Ptot Top Tstg Junction-soldering point Rth JA Rth JS ≤ 235 ≤ 155 K/W K/W _________________________ 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 22.07.
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