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PA2423L - 2.4 GHz Bluetooth Class 1 Power Amplifier

General Description

A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications.

making it capable of overcoming insertion losses of up to 2.5 dB between ampli

Key Features

  • an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit provides the turnon/off switching of amplifier output with less than 3dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423L operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 125 mA. The silicon/silicon-germanium structure of the PA2423L.
  • and its exp.

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Datasheet Details

Part number PA2423L
Manufacturer SiGe Semiconductor Inc.
File Size 367.62 KB
Description 2.4 GHz Bluetooth Class 1 Power Amplifier
Datasheet download datasheet PA2423L Datasheet

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Full PDF Text Transcription for PA2423L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PA2423L. For precise diagrams, tables, and layout, please refer to the original PDF.

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PA2423L 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information Applications Bluetoothtm Class 1 USB Dongles Laptops Access Points Cordless Piconets Product Description A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency – making it capable of overcoming insertion losses of up to 2.5 dB between amplifier output and antenna input in tm class 1 Bluetooth applications. The amplifier features: an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation.