Datasheet Details
| Part number | PA2423G |
|---|---|
| Manufacturer | SiGe Semiconductor Inc. |
| File Size | 388.97 KB |
| Description | 2.4 GHz Bluetooth Class 1 Power Amplifier |
| Datasheet |
 PA2423G Datasheet
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General Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423G is designed for Class 1 Bluetoothtm 2.4 GHz radio applications.
making it capable of overcoming insertion losses of up to 2.5 dB between amplifKey Features
- an analog control input for improving PAE at reduced output power levels; a digital control input for controlling power up and power down modes of operation. An on-chip ramping circuit corrects the turn-on/off switching of amplifier output with less than 3 dB overshoot, meeting the Bluetoothtm specification 1.1. The PA2423G operates at 3.3V DC. At typical output power level (+22.5 dBm), its current consumption is 120 mA. Shipping Method Diced wafer Waffle pack The silicon/silicon-germanium stru.
