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LH28F160S3H-L - 16M-bit (2MB x 8/1MB x 16) Smart 3 Flash Memories

Download the LH28F160S3H-L datasheet PDF (LH28F160S3-L included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 16m-bit (2mb x 8/1mb x 16) smart 3 flash memories.

Description

The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through high-optimized page buffer operations.

Features

  • Smart 3 technology.
  • 2.7 V or 3.3 V VCC.
  • 2.7 V, 3.3 V or 5 V VPP.
  • High speed write performance.
  • Two 32-byte page buffers.
  • 2.7 µs/byte write transfer rate.
  • Common Flash Interface (CFI).
  • Universal & upgradable interface.
  • Scalable Command Set (SCS) 16 M-bit (2 MB x 8/1 MB x 16) Smart 3 Flash Memories (Fast Programming).
  • High performance read access time LH28F160S3-L10/S3H-L10.
  • 100 ns (3.3±0.3 V)/120.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LH28F160S3-L-Sharp.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through high-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.
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