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LH28F016LL - 16M (1M bb 16/ 2M bb 8) Flash Memory

Description

SYMBOL TYPE NAME AND FUNCTION BYTE-SELECT ADDRESS: Selects between high and low byte when device is in x8 mode.

This address is latched in x8 Data Writes.

Not used in x16 mode (i.e., the A0 input buffer is turned off when BYTE is high).

Features

  • 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW.
  • User-Configurable x8 or x16 Operation.
  • 3 V Write/Erase Operation (3 V VPP).
  • 2.7 - 3.6 V Write-Erase Operation VSSL CE1 LX A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 CX RP A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND D.

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LH28F016LL FEATURES 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • 3 V Write/Erase Operation (3 V VPP) – 2.7 - 3.6 V Write-Erase Operation VSSL CE1 LX A20 A19 A18 A17 A16 VCC A15 A14 A13 A12 CE0 CX RP A11 A10 A9 A8 GND A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP WE OE RY/BY DQ15 DQ7 DQ14 DQ6 GND DQ13 DQ5 DQ12 DQ4 VCC GND DQ11 DQ3 DQ10 DQ2 VCC DQ9 DQ1 DQ8 DQ0 A0 BYTE NC NC • 120 ns Maximum Access Time (VCC = 3.0 V) • 150 ns Maximum Access Time (VCC = 2.7 V) • • • • 32 Independently Lockable Blocks (64K) 0.
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