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LH28F016SU - 16M (1M bb 16/ 2M bb 8) Flash Memory

Description

The LH28F016SU is a high performance 16M (16,777,216 bit) block erasable non-volatile random access memory organized as either 1M × 16 or 2M × 8.

The LH28F016SU includes thirty-two 64K (65,536) blocks or thirty-two 32-KW (32,768) blocks.

A chip memory map is shown in Figure 4.

Features

  • 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW.
  • User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.32 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block 32 Independently Lockable Blocks 5 V Write/Erase Operation (5 V VPP).
  • No Requirement for DC/DC Converter to Write/Erase.
  • 160 ns Maximum Access Time (VCC = 2.7 V) 3/5 CE1 NC A20 A19 A18 A17 A1.

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Full PDF Text Transcription

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LH28F016SU FEATURES 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP TOP VIEW • • • • • • • User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 70 ns Maximum Access Time 0.32 MB/sec Write Transfer Rate 100,000 Erase Cycles per Block 32 Independently Lockable Blocks 5 V Write/Erase Operation (5 V VPP) – No Requirement for DC/DC Converter to Write/Erase – 160 ns Maximum Access Time (VCC = 2.
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