The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.net
SEMiX453GD12Vc
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 673 513 450 1350 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 516 385 450 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 1350 2430 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 33c
VGES tpsc Tj IF IFnom
Inverse diode
SEMiX453GD12Vc Features
• Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
SEMIX453GD12VC Datasheet
