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SEMiX453GAL17E4s - IGBT

Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognized, file no. E63532 Typical.

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Full PDF Text Transcription

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SEMiX453GAL17E4s SEMiX® 3s SEMiX453GAL17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
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