SJEP170R550 - Normally-OFF Trench Silicon Carbide Power JFET

Features

- Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - RDS(on)max of 0.550 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1700 V RDS(ON)max 0.550 Ω ETS,typ 74 µJ D(2,4) G(1).

SJEP170R550 normally-off trench silicon carbide power jfet by SemiSouth - Datasheet Preview

Datasheet Details

Part number	SJEP170R550
Manufacturer	SemiSouth
File Size	214.93 KB
Description	Normally-OFF Trench Silicon Carbide Power JFET
Datasheet	SJEP170R550 Datasheet

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Full PDF Text Transcription

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Silicon Carbide SJEP170R550 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - RDS(on)max of 0.550 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1700 V RDS(ON)max 0.

Published: Feb 10, 2017 |