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SJEP120R063 - Normally-OFF Trench Silicon Carbide Power JFET

Features

  • - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - RDS(on)max of 0.063 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1200 V RDS(ON)max 0.063 Ω ETS,typ 440 µJ D(2,4) G(1).

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Datasheet Details

Part number SJEP120R063
Manufacturer SemiSouth
File Size 386.95 KB
Description Normally-OFF Trench Silicon Carbide Power JFET
Datasheet download datasheet SJEP120R063 Datasheet

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Full PDF Text Transcription

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PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 150 °C Maximum Operating Temperature - RDS(on)max of 0.063 Ω - Voltage Controlled - Low Gate Charge 4 - Low Intrinsic Capacitance Product Summary BVDS 1200 V RDS(ON)max 0.
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