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HRW82N10K - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 110nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 6.5 Pȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A D2-PAK I2-PAK HRW82N10K HRI82N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain C.

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Datasheet Details

Part number HRW82N10K
Manufacturer SemiHow
File Size 190.57 KB
Description N-Channel MOSFET
Datasheet download datasheet HRW82N10K Datasheet

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Full PDF Text Transcription

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HRW82N10K_HRI82N10K HRW82N10K / HRI82N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 110nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 6.5 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A D2-PAK I2-PAK HRW82N10K HRI82N10K 1.Gate 2. Drain 3.
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