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HRW370N10K - N-Channel Trench MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 50 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 30 Pȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested April 2016 BVDSS = 100 V RDS(on) typ = 30 Pȍ ID = 25 A D2-PAK 2 1 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain Current Drain Current.

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Datasheet Details

Part number HRW370N10K
Manufacturer SemiHow
File Size 254.07 KB
Description N-Channel Trench MOSFET
Datasheet download datasheet HRW370N10K Datasheet

Full PDF Text Transcription

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HRW370N10K HRW370N10K 100V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 50 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 30 Pȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested April 2016 BVDSS = 100 V RDS(on) typ = 30 Pȍ ID = 25 A D2-PAK 2 1 3 1.Gate 2. Drain 3.
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