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HFW75N75 - 75V N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.0105 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Dra.

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Datasheet Details

Part number HFW75N75
Manufacturer SemiHow
File Size 838.84 KB
Description 75V N-Channel MOSFET
Datasheet download datasheet HFW75N75 Datasheet

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Full PDF Text Transcription

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HFW75N75 Mar 2007 HFW75N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ=10.5 mΩ ID = 80 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V  100% Avalanche Tested D2-PAK 1.Gate 2. Drain 3.
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