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HFW6N90 - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.95 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 900 V RDS(on) typ = 1.95 ȍ ID = 6.0 A D2-PAK I2-PAK HFW6N90 HFI6N90 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS.

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Datasheet Details

Part number HFW6N90
Manufacturer SemiHow
File Size 187.54 KB
Description N-Channel MOSFET
Datasheet download datasheet HFW6N90 Datasheet

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Full PDF Text Transcription

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HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 35 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.95 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 900 V RDS(on) typ = 1.95 ȍ ID = 6.0 A D2-PAK I2-PAK HFW6N90 HFI6N90 1.Gate 2. Drain 3.
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