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HFD8N70U_HFU8N70U
HFD8N70U / HFU8N70U
700V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.3 ȍ7S#9GS=10V 100% Avalanche Tested
June 2015
BVDSS = 700 V RDS(on) typ = 1.3 ȍ ID = 6.0 A
D-PAK I-PAK
2
1 3
HFD8N70U
1
2 3
HFU8N70U
1.Gate 2. Drain 3.