Datasheet4U Logo Datasheet4U.com

HFU8N60U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A D-PAK I-PAK 2 1 3 HFD8N60U 1 2 3 HFU8N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbo.

📥 Download Datasheet

Datasheet Details

Part number HFU8N60U
Manufacturer SemiHow
File Size 323.20 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU8N60U Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFU70N03V N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number Description
HFU8N65U N-Channel MOSFET
HFU8N70U N-Channel MOSFET
HFU1N60 N-Channel MOSFET
HFU1N60F 600V N-Channel MOSFET
HFU1N60S N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFD8N60U_HFU8N60U HFD8N60U / HFU8N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested May 2014 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A D-PAK I-PAK 2 1 3 HFD8N60U 1 2 3 HFU8N60U 1.Gate 2. Drain 3.
Published: |