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HFS8N65U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM.

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Datasheet Details

Part number HFS8N65U
Manufacturer SemiHow
File Size 308.18 KB
Description N-Channel MOSFET
Datasheet download datasheet HFS8N65U Datasheet

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Full PDF Text Transcription

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HFS8N65U HFS8N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 650 V RDS(on) typ ȍ ID = 7.5 A TO-220F 12 3 1.Gate 2. Drain 3.
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