Datasheet4U Logo Datasheet4U.com

HFS8N65S - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.16 ȍ (Typ. ) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

📥 Download Datasheet

Datasheet Details

Part number HFS8N65S
Manufacturer SemiHow
File Size 251.84 KB
Description N-Channel MOSFET
Datasheet download datasheet HFS8N65S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFS8N65S N-Channel 650V Power MOSFET VBsemi
HFS8N60S N-Channel 650V Power MOSFET VBsemi
HFS8 I/O module HF
HFS15 SOLID STATE RELAY HF
HFS2 MOS RELAY HF

Other Datasheets by SemiHow

Part Number Description
HFS8N65U N-Channel MOSFET
HFS8N60S N-Channel MOSFET
HFS8N60U N-Channel MOSFET
HFS8N70S N-Channel MOSFET
HFS8N70U N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFS8N65S Sep 2009 HFS8N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 1.16 ȍ ID = 7.2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.16 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3.
Published: |