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HFS4N65F - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 8.5 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 3.0 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 4 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR.

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Datasheet Details

Part number HFS4N65F
Manufacturer SemiHow
File Size 199.68 KB
Description N-Channel MOSFET
Datasheet download datasheet HFS4N65F Datasheet

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Full PDF Text Transcription

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HFS4N65F July 2015 HFS4N65F 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 8.5 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 3.0 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 650 V RDS(on) typ ȍ ID = 4 A TO-220F 12 3 1.Gate 2. Drain 3.
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