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HFS2N60S - 600V N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.2 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFS2N60S
Manufacturer SemiHow
File Size 409.36 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet HFS2N60S Datasheet

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Full PDF Text Transcription

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HFS2N60S Nov 2007 HFS2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 4.2 Ω ID = 2.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220F 123 1.Gate 2. Drain 3.
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