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HFS2N60 - 600V N-Channel MOSFET

Features

  • ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ. ) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Tested Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Source Voltage Drain-.

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Datasheet Details

Part number HFS2N60
Manufacturer SemiHow
File Size 311.31 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet HFS2N60 Datasheet

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Full PDF Text Transcription

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HFS2N60 July 2005 BVDSS = 600 V HFS2N60 600V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8 8.5 5 nC (Typ (Typ.) ) RDS(on) typ = 4.0 Ω ID = 2.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 4.0 Ω (Typ.
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