Datasheet4U Logo Datasheet4U.com

HFP8N60S - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

📥 Download Datasheet

Datasheet Details

Part number HFP8N60S
Manufacturer SemiHow
File Size 196.52 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP8N60S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFP80N75 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP13N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP13N50 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP15N06 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP17N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number Description
HFP8N60U N-Channel MOSFET
HFP8N65S N-Channel MOSFET
HFP8N65U N-Channel MOSFET
HFP8N70U N-Channel MOSFET
HFP830 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFP8N60S Dec 2006 HFP8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 7.5 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.
Published: |