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HFP7N60 - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 25 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.96 Ω (Typ. ) @VGS=10V Dec 2005 BVDSS = 600 V RDS(on) typ = 0.96 Ω ID = 7.0 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai.

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Datasheet Details

Part number HFP7N60
Manufacturer SemiHow
File Size 589.27 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP7N60 Datasheet

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Full PDF Text Transcription

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HFP7N60 HFP7N60 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 25 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V Dec 2005 BVDSS = 600 V RDS(on) typ = 0.96 Ω ID = 7.0 A TO-220 1 2 3 1.Gate 2. Drain 3.
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