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HFP730 - N-Channel Enhancement Mode Field Effect Transistor

Description

these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

Features

  • s 5.5A, 400V, RDS(on).

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Datasheet Details

Part number HFP730
Manufacturer Shantou Huashan Electronic
File Size 519.17 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet HFP730 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor █ General Description these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 █ Features 5.5A, 400V, RDS(on) <1.
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