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HFP6N90 - N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current.

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Datasheet Details

Part number HFP6N90
Manufacturer SemiHow
File Size 1.15 MB
Description N-Channel MOSFET
Datasheet download datasheet HFP6N90 Datasheet

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Full PDF Text Transcription

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HFP6N90 Dec 2005 HFP6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3.
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