Datasheet4U Logo Datasheet4U.com

HFP6N60U - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested July 2012 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM V.

📥 Download Datasheet

Datasheet Details

Part number HFP6N60U
Manufacturer SemiHow
File Size 199.66 KB
Description N-Channel MOSFET
Datasheet download datasheet HFP6N60U Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFP60N06 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP630 N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan
HFP640 N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan
HFP13N10 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC
HFP13N50 N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number Description
HFP6N65U N-Channel MOSFET
HFP6N70U N-Channel MOSFET
HFP6N90 N-Channel MOSFET
HFP630 200V N-Channel MOSFET
HFP630A 200V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFP6N60U HFP6N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested July 2012 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3.
Published: |