HFB1N60S - N-Channel MOSFET

Features

Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cur.

SemiHow

Datasheet Details

Part number	HFB1N60S
Manufacturer	SemiHow
File Size	241.74 KB
Description	N-Channel MOSFET
Datasheet	HFB1N60S Datasheet
Additional preview pages of the HFB1N60S datasheet.

📁 Similar Datasheet

HFB12PA120C - Soft Recovery Diode (International Rectifier)
HFB16HY20C - Soft Recovery Diode (International Rectifier)
HFB16HY20CC - Soft Recovery Diode (International Rectifier)
HFB16PA60C - Ultrafast/ Soft Recovery Diode (International Rectifier)
HFB03 - High Frequency Ferrite Beads (Allied Components International)
HFB05 - High Frequency Ferrite Beads (Allied Components International)
HFB06TB120 - Ultrafast/ Soft Recovery Diode (International Rectifier)
HFB08PB120 - Ultrafast/ Soft Recovery Diode (International Rectifier)
HFB08TB120 - Ultrafast/ Soft Recovery Diode (International Rectifier)
HFB08TB120PBF - SOFT RECOVERY DIODE (International Rectifier)

Other Datasheets by SemiHow

HFB1N60 - N-Channel MOSFET
HFB1N65S - N-Channel MOSFET
HFB1N70 - N-Channel MOSFET
HFB1N70S - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

HFB1N60S Sep 2009 HFB1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.3 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested TO-92 1 2 3 1.Gate 2. Drain 3.

Published: Jun 7, 2015 |